vishay siliconix SUP90N04-3M3P document number: 65902 s10-0632-rev. a, 22-mar-10 www.vishay.com 1 n-channel 40 v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g and uis tested ? compliant to rohs directive 2002/95/ec applications ? power supply - secondary synchronous rectification ? dc/dc converter product summary v ds (v) r ds(on) ( ) i d (a) d q g (typ.) 40 0.0033 at v gs = 10 v 90 87 0.0041 at v gs = 4.5 v 90 to-220ab top view gds ordering information: SUP90N04-3M3P-ge3 (lead (pb)-free and halogen-free) n-channel mosfet g d s notes: a. duty cycle 1 %. b. see soa curve for voltage derating. c. when mounted on 1" square pcb (fr-4 material). d. package limited. absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 40 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 90 d a t c = 70 c 90 d pulsed drain current i dm 160 avalanche current i as 60 single avalanche energy a l = 0.1 mh e as 180 mj maximum power dissipation a t c = 25 c p d 125 b w t a = 25 c c 3.1 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol limit unit junction-to-ambient (pcb mount) c r thja 40 c/w junction-to-case (drain) r thjc 1
www.vishay.com 2 document number: 65902 s10-0632-rev. a, 22-mar-10 vishay siliconix SUP90N04-3M3P notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subject to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v ds = 0 v, i d = 250 a 40 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 12.5 gate-body leakage i gss v ds = 0 v, v gs = 20 v 250 na zero gate voltage drain current i dss v ds = 40 v, v gs = 0 v 1 a v ds = 40 v, v gs = 0 v, t j = 125 c 50 v ds = 40 v, v gs = 0 v, t j = 150 c 250 on-state drain current a i d(on) v ds 10 v, v gs = 10 v 50 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 22 a 0.0027 0.0033 v gs = 4.5 v, i d = 20 a 0.0034 0.0041 forward transconductance a g fs v ds = 15 v, i d = 20 a 169 s dynamic b input capacitance c iss v gs = 0 v, v ds = 20 v, f = 1 mhz 5286 pf output capacitance c oss 705 reverse transfer capacitance c rss 283 total gate charge c q g v ds = 20 v, v gs = 10 v, i d = 20 a 87 131 nc gate-source charge c q gs 15.3 gate-drain charge c q gd 12.2 gate resistance r g f = 1 mhz 0.5 2.7 5.4 tu r n - o n d e l ay t i m e c t d(on) v dd = 20 v, r l = 2 i d ? 10 a, v gen = 10 v, r g = 1 11 20 ns rise time c t r 714 turn-off delay time c t d(off) 45 68 fall time c t f 714 drain-source body diode ratings and characteristics t c = 25 c b continuous current i s 90 a pulsed current i sm 160 forward voltage a v sd i f = 10 a, v gs = 0 v 0.72 1.2 v reverse recovery time t rr i f = 10 a, di/dt = 100 a/s 42 63 ns peak reverse recovery current i rm(rec) 2.5 3.8 a reverse recovery charge q rr 52 78 nc
vishay siliconix SUP90N04-3M3P document number: 65902 s10-0632-rev. a, 22-mar-10 www.vishay.com 3 typical characteristics (25 c, unless otherwise noted) output characteristics transfer characteristics transconductance 0 0 0.5 1.0 1.5 2.0 40 80 120 160 v ds - drain-to-source voltage (v) i d - drain current (a) 2 v v gs = 10 v thru 3 v 0 0 0.6 1.2 1.8 2.4 3.0 2 4 6 8 10 v gs - gate-to-source voltage (v) i d - drain current (a) t c = 25 c t c = 125 c t c = - 55 c 0 0 1632486480 90 180 270 360 450 i d - drain current (a) g fs - transconductance (s) t c = 125 c t c = 25 c t c = - 55 c on-resistance vs. drain current on-resistance vs. gate-to-source voltage gate charge 0.0020 0 20406080100 0.0025 0.0030 0.0035 0.0040 i d - drain current (a) r ds(on) - on-resistance ( ) v gs = 4.5 v v gs = 10 v 0.00 02 6 4810 0.08 0.06 0.04 0.02 0.10 v gs - gate-to-source voltage (v) r ds(on) - on-resistance ( ) t j = 150 c t j = 25 c 0 153045607590 v gs - gate-to-source voltage (v) q g - total gate charge 0 2 4 6 8 10 v ds = 15 v i d = 24 a v ds = 24 v v ds = 8 v
www.vishay.com 4 document number: 65902 s10-0632-rev. a, 22-mar-10 vishay siliconix SUP90N04-3M3P typical characteristics (25 c, unless otherwise noted) source-drain diode forward voltage capacitance on-resistance vs. junction temperature 0.1 0.0 0.3 0.9 0.6 1.2 1 10 100 i s - source current (a) v sd - source-to-drain voltage (v) t j = 150 c t j = 25 c 0 0 10203040 2000 4000 6000 8000 v ds - drain-to-source voltage (v) c - capacitance (pf) c rss c iss c oss 0.5 - 50 - 25 25 75 125 0 50 100 150 175 0.8 1.4 1.1 1.7 2.0 r ds(on) - on-resistance (normalized) t j - junction temperature (c) i d = 22 a v gs = 4.5 v v gs = 10 v threshold voltage drain source breakdown vs. junction temperature current derating 0.2 - 50 - 25 25 75 125 0 50 100 150 175 0.7 1.7 1.2 2.2 t j - junction temperature (c) v gs(th) (v) i d = 250 a 40 - 50 - 25 25 75 125 0 50 100 150 42 46 44 48 50 v ds - drain-to-source voltage (v) t j - junction temperature (c) i d = 250 a 0 0 25 50 75 100 150 125 40 80 120 160 t c - case temperature (c) i d - drain current (a) package limited
vishay siliconix SUP90N04-3M3P document number: 65902 s10-0632-rev. a, 22-mar-10 www.vishay.com 5 typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65902 . single pulse avalanche current capability vs. time 1 0.00001 0.0001 0.001 0.01 0.1 10 100 time (s) i dav (a) t j = 25 c t j = 150 c safe operating area 0.01 0.1 1 100 10 0.1 1 10 1000 100 v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specied i d - drain current (a) 100 s 1 ms 10 ms limited by r ds(on) * 100 ms, 1 s 10 s, dc bvdss limited t a = 25 c single pulse normalized thermal transient impedance, junction-to-case 10 -4 10 -3 10 -2 10 -1 1 1 0.1 square wave pulse duration (s) normalized effective transient thermal impedance single pulse 0.05 0.02 duty cycle = 0.5 0.2 0.1
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